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Proceedings Paper

Optical Device Structures Grown By Liquid Phase Epitaxy (LPE)
Author(s): R. A. Logan
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Paper Abstract

Near ideal injection lasers can be grown by liquid phase epitaxy but the growth process must include etching of a first epitaxial growth and controlled wetting, melt back and re-growth in a second growth cycle. The growth and properties of two such lasers, the strip buried heterostructure (SBH) and loss stabilized buried optical guide (LSBOG) are described in some detail. Similar growth procedures provide integration of lasers with waveguides, modulators, distributed Bragg reflectors and the formation of uniform arrays of lasers with laser to laser separation as close as 15 μm.

Paper Details

Date Published: 15 September 1982
PDF: 6 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934290
Show Author Affiliations
R. A. Logan, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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