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Proceedings Paper

Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)
Author(s): M. B. Small; R. M. Potemski
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Paper Abstract

The morphologies observed on layers of III-V compounds and their alloys grown by Liquid Phase Epitaxy (LPE) are reviewed; these include: facets, terraces and the effect of small misorientation of the substrate; effects due to both the moving and the static three-phase boundary line on the surface of the crystal; nucleation effects; and the effects of insoluble particles in they solutions.

Paper Details

Date Published: 15 September 1982
PDF: 4 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934289
Show Author Affiliations
M. B. Small, IBM Thomas J. Watson Research Center (United States)
R. M. Potemski, IBM Thomas J. Watson Research Center (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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