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Proceedings Paper

Liquid Phase Epitaxy (LPE) Techniques For Compound Semiconductor Growth
Author(s): L. R. Dawson
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Paper Abstract

Liquid phase epitaxy (LPE) is a method of crystal growth well suited to the preparation of a wide range of compound semiconductor materials including GaAs, AlAs, GaP, InP, and GaSb, as well as their ternary and quaternary alloys. The advantages of LPE over other solution growth methods are substantial, primarily in material purity, doping flexibility, and dimensional control. It has particular advantages in achieving the complex multilayer structures required for many interesting optical devices, such as injection lasers, light emitting diodes, and photodetectors. LPE has appeared in many configurations in recent years, with the dominant variation at present being the sliding boat method. A good understanding of the capabilities of this method can be obtained by studying the growth of GaAs-AlxGa1-xAs heterostructures.

Paper Details

Date Published: 15 September 1982
PDF: 8 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934288
Show Author Affiliations
L. R. Dawson, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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