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Proceedings Paper

Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)
Author(s): R. D. Dupuis; R. T. Lynch; C. D. Thurmond; W. A. Bonner
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Paper Abstract

The electrical properties of unintentionally-doped InP epitaxial layers grown on (100) InP:Fe substrates by Metalorganic Chemical Vapor Deposition (MOCVD) have been studied as a function of the source materials and the deposition conditions. The low-temperature (77K) photoluminescence of these films was also studied and used to identify zinc as the major residual acceptor in these films.

Paper Details

Date Published: 15 September 1982
PDF: 7 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934287
Show Author Affiliations
R. D. Dupuis, Bell Laboratories (United States)
R. T. Lynch, Bell Laboratories (United States)
C. D. Thurmond, Bell Laboratories (United States)
W. A. Bonner, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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