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Proceedings Paper

Use Of Column V Alkyls In Organometallic Vapor Phase Epitaxy (OMVPE)
Author(s): M. J. Ludowise; C. B. Cooper
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Paper Abstract

The use of the column V trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs1-ySby, Al x Ga1-xSb and Ga1-xInxAs as examples.

Paper Details

Date Published: 15 September 1982
PDF: 8 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934285
Show Author Affiliations
M. J. Ludowise, Corporate Solid State Laboratory (United States)
C. B. Cooper, Corporate Solid State Laboratory (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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