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Proceedings Paper

Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources
Author(s): Rajaram Bhat; Vassilis G. Keramidas
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Paper Abstract

Atmospheric and low pressure (76 torr) epitaxial growth of gallium arsenide (GaAs) from trimethyl gallium (TMG) and triethyl gallium (TEG) has been studied. The results indicate that both TMG and TEG are capable of yielding high purity GaAs epitaxial layers. TMG is the preferred compound when large area uniform layers are desired at all reactor pressures. TEG is recommended only in those cases where carbon acceptor free GaAs is required and low pressure capability is available.

Paper Details

Date Published: 15 September 1982
PDF: 6 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934283
Show Author Affiliations
Rajaram Bhat, Bell Laboratories (United States)
Vassilis G. Keramidas, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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