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Proceedings Paper

Shallow Proton Striped GaAlAs Lasers Grown By Metalorganic Chemical Vapor Deposition (MOCVD)
Author(s): R D. Burnham; D. R. Scifres; W. Streifer
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Paper Abstract

Stripe geometry lasers grown by MO-CVD lasing at 8260 Å (-7% Al in the active region) were characterized. Pulsed current thresholds vary little with stripe width for 4, 6, and 8 microns. The lowest pulsed threshold was 31 mA for a 125-µm-long device. This laser with a 6 μm stripe exhibited a kink-free light output vs. current characteristic up to 15 mW/facet and had a differential quantum efficiency nD ≈ 76%. The threshold currents and the increase of laser threshold with increasing cavity length were found to be significantly lower than those of previously-published devices. For 51 lasers that are 200±10 μm long with 4, 6, or 8 μm stripe widths, the average threshold currents were 40.4 mA, 41.1 mA, and 42 mA, respectively, and 37 of these lasers fall within ±1 mA of these averages. External differential quantum efficiencies for these same lasers are 75%, 67%, and 63%, respectively.

Paper Details

Date Published: 15 September 1982
PDF: 4 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934282
Show Author Affiliations
R D. Burnham, Xerox Palo Alto Research Center (United States)
D. R. Scifres, Xerox Palo Alto Research Center (United States)
W. Streifer, Xerox Palo Alto Research Center (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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