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Proceedings Paper

Comparison Of InP Grown By The Chloride And Hydride Techniques
Author(s): Kenneth A. Jones
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Paper Abstract

It is shown that the steady state chloride growth process is thermodynamically similar to the hydride growth process. The observed growth rate dependence on the input PC13 pressure at lower PC13 pressures and on the downstream PC13 pressure can be explained for the chloride system using thermodynamics. The shape of the growth rate curves as functions of the input HCl and PH3 pressures can be described thermodynamically at lower pressures. The background carrier concentration in chloride grown films as a function of the input PC13 concentration can be explained thermodynamically, but the effects of downstream PCl3 cannot.

Paper Details

Date Published: 15 September 1982
PDF: 13 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934280
Show Author Affiliations
Kenneth A. Jones, Colorado State University (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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