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Proceedings Paper

Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications
Author(s): S. T. Jolly; S. Y. Narayan; J. P. Paczkowski; D. Capewell
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Paper Abstract

Vapor-phase epitaxy (VPE) systems for the growth of 1) GaAs on Cr-doped GaAs substrates, and 2) lattice matched GaInAs and GaInAsP on Fe-doped InP substrates are briefly described. Layer composition of the ternary and quaternary compounds were measured by electron probe microanalysis, lattice mismatch by X-ray diffractometry, average carrier concentration and mobility determined using the Van der Pauw technique. Carrier profiles were investigated using an electro-chemical profiler. Several hundred n-type Ga0.47In0.53As/InP structures have been grown and characterized. Unintentionally-doped layers with a carrier concentration of 2x1015cm-3 and μ(300) and μ(77) of 11x103 and 38x103cm2V-ls-1, respectively, were realized. These represent the highest mobility values reported for VPE Ga0.47In0.53As at this doping level. Se-doped n-layers ranging in thickness from 0.2 to several μm and with carrier density from 1x1016 cm to 3x1018cm-3 + were grown. n-n structures with sharp n+-n transitions were grown for device fabrication studies. The doping profile of a 2 cm x 1 cm ternary layer grown using a rotating substrate holder was found to be fairly uniform; this n+-n wafer had an n+-layer doping of 1.6±0.1x1018cm-3, n+-layer thickness of 0.31±0.01 μm, n-layer doping of 9.5±0.5x101bcm-3, and n-layer thickness of 0.3±0.03 μm. The mobility profile of submicrometer n-layers was measured using the differential Van der Pauw technique. The high mobility was found to be maintained down to the ternary-substrate interface.

Paper Details

Date Published: 15 September 1982
PDF: 7 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934279
Show Author Affiliations
S. T. Jolly, RCA Laboratories (United States)
S. Y. Narayan, RCA Laboratories (United States)
J. P. Paczkowski, RCA Laboratories (United States)
D. Capewell, RCA Laboratories (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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