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Proceedings Paper

Laser Spectroscopic Monitoring Of A Hydride Transport Vapor Phase Epitaxy (VPE) Reactor
Author(s): R. F. Karlicek; V. M. Donnelly; W. D. Johnston
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Paper Abstract

Laser spectroscopy techniques have been demonstrated for monitoring of gas-phase reactants in a system designed to simulate a hydride transport vapor phase epitaxy (VPE) reactor used to grow InxGa1-xAsyP1-y. Using a single excitation wavelength, unique emissions characteristic of InCl,GaC1, P2, As2, As4, PH3, and AsH3 can be resolved under typical VPE conditions (700°-800°C, 1 atm total pressure) making this technique ideally suited for nonintrusive, real-time, simultaneous monitoring of these species during growth. Detection limits range from 10-5 to 10-8 atm, well below species concentrations typically expected under growth conditions (10-3 -10-4 atm). The details of this technique and some examples of its use in determining VPE growth conditions are presented.

Paper Details

Date Published: 15 September 1982
PDF: 5 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934277
Show Author Affiliations
R. F. Karlicek, Bell Laboratories (United States)
V. M. Donnelly, Bell Laboratories (United States)
W. D. Johnston, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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