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Proceedings Paper

Growth And Characterization Of Vapor Deposited Indium Phosphide
Author(s): B. W. Wessels; M. Inuishi
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Paper Abstract

The chemical vapor deposition of indium phosphide using the In/HCl/PH3/H2 reactant system is described. The deposition kinetics were studied as function of reactant concentration and substrate temperature. Studies of deposition of both polycrystalline and single crystalline material indicated that the growth rate of the thin films was limited by surface kinetics via a Langmuir-type absorption mechanism. Stoichiometry of the gas phase influenced the electrical properties of the as-grown epitaxial layers. For a group V/III ratio of 0.70 in the growth ambient, net donor densities of 1.5 x 1016 cm-3 were observed in the undoped epitaxial layers. Transient capacitance spectroscopy indicated deep level concentrations of the order 1-10 x 1014 cm-3 in the n and p-type epitaxial InP.

Paper Details

Date Published: 15 September 1982
PDF: 7 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934276
Show Author Affiliations
B. W. Wessels, Northwestern University (United States)
M. Inuishi, Northwestern University (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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