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Proceedings Paper

InP Millimeter Wave Gunn Devices By Vapor Phase Epitaxy (VPE)
Author(s): J. D. Crowley; D. R. Tringali; I. V. Zubeck; F. B. Fank
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Paper Abstract

Vapor phase epitaxial growth, using a PC13-In-H2 system, has been used to produce InP Gunn devices for the millimeter wave range. Several different multilayer profile configurations have been utilized to produce state-of-the-art performance in the areas of low noise amplifiers, medium power amplifiers and high efficiency Gunn oscillators for operation throughout the 26-140 GHz range. Typical doping profiles of each device structure, as well as the growth procedures required for each profile, are discussed. Device fabrication techniques and measured rf data are also presented.

Paper Details

Date Published: 15 September 1982
PDF: 5 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934275
Show Author Affiliations
J. D. Crowley, Varian Associates (United States)
D. R. Tringali, Varian Associates (United States)
I. V. Zubeck, Varian Associates (United States)
F. B. Fank, Varian Associates (United States)

Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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