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Proceedings Paper

Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl[sub]3[/sub] Technique
Author(s): M. Feng; V. Eu; T. Zielinski; J. M. Whelan
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Paper Abstract

This paper describes a method for the reproducible Si-doping of GaAs epitaxial material in the range of lx1016 to 2x1019 cm-3, using a SiCl4 + AsC13 liquid source in a GaAs + Ga/H2/AsC13 chemical vapor deposition process. Excellent electron mobilities have been achieved for a variety of Si doped GaAs samples. Power FET devices made from this material have demonstrated output power densities of 0.86 watts/mm at 10 GHz. Low noise FET devices made from this material have demonstrated a noise figure of 2.2 dB with 8.5 dB associated gain at 12 GHz.

Paper Details

Date Published: 15 September 1982
PDF: 5 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934274
Show Author Affiliations
M. Feng, Hughes Aircraft Company (United States)
V. Eu, Hughes Aircraft Company (United States)
T. Zielinski, Hughes Aircraft Company (United States)
J. M. Whelan, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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