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Proceedings Paper

Novel Ga/AsCl[sub]3[/sub]/H[sub]2[/sub] Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs
Author(s): P. C. Colter; C. W. Litton; D. C. Reynolds; D. C. Look; P. W. Yu; S. S. Li; W. L. Wang
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Paper Abstract

An AsCl3 vapor phase epitaxial reactor has been constructed which is capable of operation with a variable controlled Ga/As ratio. Layers grown in this reactor have been characterized by photoluminescence, electrical and DLTS measurements. Results to date indicate differing influence of the Ga/As gas phase ratio on <100> and <211A> orientation layers, particularly on deep level incorporation.

Paper Details

Date Published: 15 September 1982
PDF: 8 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934272
Show Author Affiliations
P. C. Colter, Universal Energy Systems, Inc. (United States)
C. W. Litton, AFWAL Avionics Laboratory (United States)
D. C. Reynolds, AFWAL Avionics Laboratory (United States)
D. C. Look, Wright State University (United States)
P. W. Yu, Wright State University (United States)
S. S. Li, University of Florida (United States)
W. L. Wang, University of Florida (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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