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Proceedings Paper

Al[sub]x[/sub]Ga[sub]1-x[/sub]As/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy
Author(s): H. Morkoc; N. Holonyak; T. J. Drummond; M. D. Camras; R. Fischer
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Paper Abstract

AlxGa1-xAs/GaAs multiple quantum well (MQW) heterojunction structures have been grown by molecular beam epitaxy. Photopumped structures having quantum well sizes as low as 28 Å have shown 300 K and cw performance. MQW's with 28 Å well sizes grown at a substrate temperature of 720°C resulted in an equivalent current density of 2.3 kA/cm2 at a wavelength of about 7,270 Å.

Paper Details

Date Published: 15 September 1982
PDF: 4 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934270
Show Author Affiliations
H. Morkoc, University of Illinois (United States)
N. Holonyak, University of Illinois (United States)
T. J. Drummond, University of Illinois (United States)
M. D. Camras, University of Illinois (United States)
R. Fischer, University of Illinois (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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