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Proceedings Paper

Molecular Beam Epitaxial Growth Of Silicon Devices
Author(s): F. G. Allen; S. S. Iyer; R. A. Metzger
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Paper Abstract

Silicon growth by Molecular Beam Epitaxy has great advantages for device fabrication. It can readily provide doping profiles with arbitrary and complex shapes, in any sequence, with abrupt transitions without smearing or compensation. Excellent depth and doping control results for layer thickness down to a few angstroms. Examples are shown of profiles that have already been grown for varactor diodes, avalanche and tunnel diodes, a low barrier Schottky diode and an n-p-n bipolar transistor.

Paper Details

Date Published: 15 September 1982
PDF: 11 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934269
Show Author Affiliations
F. G. Allen, University of California/Los Angeles (United States)
S. S. Iyer, University of California/Los Angeles (United States)
R. A. Metzger, University of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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