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Proceedings Paper

New cryogenic P-channel metal-oxide-semiconductor field effect transistor (MOSFET) with optimized doping yielding performance superior to the G-118, W-164, and 3N165 at 77K, 4K, and 1.8K
Author(s): R. F. Arentz; V. Hadek; V. L. Hoxie
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Paper Abstract

We introduce a new P-channel, enhancement mode, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) which is optimized for use at liquid helium temperatures. The new device, now labelled the ZK-111, operates very well to at least 1.8K. It can operate at power levels of a few picowatts, is zener diode protected, and has higher gain and transconductance, lower channel "ON" resistance, higher channel "OFF" resistance, and better thermal cycling stability than any MOSFET commonly used in infrared focal planes. It has a grounded gate 1/f spot noise that is less than 1μV/√Hz at 1 Hz, ,and is 1/f to beyond 50 KHz. It is now commercially available through Cryoelectronic Inc.

Paper Details

Date Published: 16 August 1983
PDF: 9 pages
Proc. SPIE 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II, (16 August 1983); doi: 10.1117/12.934190
Show Author Affiliations
R. F. Arentz, Ball Aerospace Systems Division (United States)
V. Hadek, Jet Propulsion Laboratories (United States)
V. L. Hoxie, Solitron Corporation (United States)


Published in SPIE Proceedings Vol. 0364:
Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II
Ronald J. Huppi, Editor(s)

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