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Proceedings Paper

Characteristics Of InSb Photovoltaic Detectors At 77K And Below
Author(s): J. T. Wimmers; D. S. Smith
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Paper Abstract

Indium antimonide photovoltaic detector parameters which are critical to the design of high-performance focal planes have been measured and are reported. Detector capacitances as a function of voltage, area and temperature are presented and the data is shown to agree well with the abrupt junction model. Resistance-area products as a function of temperature have also been measured; values as high as 1011Ω -cm2 at 50 K. are reported. In addition, fabrication techniques are discussed which can minimize additional capacitances to the diode, as well as maximize the area definition.

Paper Details

Date Published: 16 August 1983
PDF: 9 pages
Proc. SPIE 0364, Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II, (16 August 1983); doi: 10.1117/12.934189
Show Author Affiliations
J. T. Wimmers, Cincinnati Electronics Corporation (United States)
D. S. Smith, Cincinnati Electronics Corporation (United States)


Published in SPIE Proceedings Vol. 0364:
Technologies of Cryogenically Cooled Sensors and Fourier Transform Spectrometers II
Ronald J. Huppi, Editor(s)

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