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Proceedings Paper

New Devices And Materials For Ultrafast High Speed Photodetectors For The Ultraviolet Through To The Infrared
Author(s): Brian K. Garside; Francois L. Gouin
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Paper Abstract

Recent developments in fiber optics and laser sources have emphasised the need for high efficiency semiconductor photodetectors responding at unprecedented speeds over an ever-expanding wavelength range. To meet these needs, new types of device structures and new materials are increasingly being explored. The influence of general device and material characteristics on device capability is discussed, and the limitations explained through the use of general, time-dependent detector models. Appropriate device structures and materials are discussed for the development of high quantum efficiency, fast detectors at wavelengths ranging from the ultraviolet through to the infrared region appropriate to future optical communications systems. Recent results using junction and modified Schottky barrier structures are described, and the development of new materials for detector applications in the visible and infrared spectral regions is discussed.

Paper Details

Date Published: 22 March 1983
PDF: 10 pages
Proc. SPIE 0355, Fiber Optics: Short-Haul and Long-Haul Measurements and Applications I, (22 March 1983); doi: 10.1117/12.934004
Show Author Affiliations
Brian K. Garside, Opto-Electronics Limited (Canada)
Francois L. Gouin, Opto-Electronics Limited (Canada)


Published in SPIE Proceedings Vol. 0355:
Fiber Optics: Short-Haul and Long-Haul Measurements and Applications I
Robert L. Galawa, Editor(s)

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