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Proceedings Paper

Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development
Author(s): John R. Barrett; Murzban D. Jhabvala
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Paper Abstract

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (>10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Paper Details

Date Published: 10 August 1983
PDF: 10 pages
Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); doi: 10.1117/12.933894
Show Author Affiliations
John R. Barrett, Itek Corporation (United States)
Murzban D. Jhabvala, Goddard Space Flight Center (United States)


Published in SPIE Proceedings Vol. 0350:
Focal Plane Methodologies III
William S. Chan; John T. Hall, Editor(s)

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