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Proceedings Paper

Antiblooming System For Infrared Hybrid Focal Plane Arrays
Author(s): M. Arques; B. Munier; J. Portmann; J. P. Reboul
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Paper Abstract

A new blooming suppression system for infrared hybrid focal plane arrays is presented and discussed. This system, using a hybrid technique, is based on a charge coupled device (CCD) on a p-silicon substrate. The infrared detectors are p-n photodiodes, for example, HgCdTe, PbSnTe, I nSb, etc. Each detector is connected to a lateral input of an integrator and multiplexer CCD respecting the direct injection technique. A small area input CCD stage has been designed which allows, assuming adequate bias conditions, complete separation of the storage wells where the current of the photodiodes is integrated. Consequently, there is no blooming between the storage wells during the integration time. In addition, this stage, prevents the charge transferred (from the storage well to the CCD well) exceeding the capacity of the CCD well. Assuming that these two conditions are fulfilled, and that there is adequate gate dynamic drive, blooming is avoided in the p-silicon substrate : there is no theoretical limit to this blooming protection. This antiblooming system uses standard CCD technology, two-phases, surface-and buried- channels, and poly-silicon gates. The efficiency of the antiblooming has been demonstrated by connecting infrared photodiodes on a HgCdTe and PbSnTe substrate to a 34-stage CCD The antiblooming device allows a protection of at least 40 dB over blooming ; for values greater than this, care must be taken of diaphoty.

Paper Details

Date Published: 10 August 1983
PDF: 8 pages
Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); doi: 10.1117/12.933893
Show Author Affiliations
M. Arques, Thomson-CSF Electron Tube Division (France)
B. Munier, Thomson-CSF Electron Tube Division (France)
J. Portmann, Thomson-CSF Electron Tube Division (France)
J. P. Reboul, Thomson-CSF Electron Tube Division (France)


Published in SPIE Proceedings Vol. 0350:
Focal Plane Methodologies III
William S. Chan; John T. Hall, Editor(s)

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