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Proceedings Paper

Microstructure In A-GaAs:H Alloys And Its Correlation With The Electronic Properties
Author(s): D. K. Paul; J. Blake; G. Moddel; William Paul
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Paper Abstract

Hydrogenated alloys of a-GaAs have been prepared by r.f. sputtering in a mixture of argon and hydrogen at several partial pressures, substrate temperatures and r.f. powers. We report the results of a systematic investigation of the microstructural properties of these films by SEM and TEM, and attempt a correlation with the deposition parameters and other electronic properties.

Paper Details

Date Published: 15 September 1982
PDF: 10 pages
Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933797
Show Author Affiliations
D. K. Paul, Harvard University (United States)
J. Blake, Harvard University (United States)
G. Moddel, Harvard University (United States)
William Paul, Harvard University (United States)


Published in SPIE Proceedings Vol. 0346:
Thin Film Technologies and Special Applications
William R. Hunter, Editor(s)

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