Share Email Print

Proceedings Paper

Creation Of Thin, Highly Doped Layers For Ohmic Contact Formation On N-Type GAAS And SI
Author(s): Gisela Eckhardt
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Ohmic contacts to semiconductors are usually formed between a metal and a highly doped semiconductor layer. A number of techniques are used to produce such layers: alloying of multilayer contact-metal structures containing a dopant, growth of epitaxial layers, shallow diffusion, and shallow ion implantation. All of these methods require the application of elevated temperatures, usually done by furnace annealing. The trends towards very large scale integration (VLSI) and very high speed integrated circuits (VHSIC) have put more stringent requirements on structural and chemical uniformity, on dimensional accuracy, and on specific contact resistance of Ohmic contacts than can be met easily and routinely with standard methods. Substantial improvements of Ohmic-contact properties have been achieved during the past years by employing novel processing techniques such as molecular beam epitaxy, laser or electron-beam annealing.

Paper Details

Date Published: 15 September 1982
PDF: 8 pages
Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933796
Show Author Affiliations
Gisela Eckhardt, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0346:
Thin Film Technologies and Special Applications
William R. Hunter, Editor(s)

© SPIE. Terms of Use
Back to Top