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Proceedings Paper

Effect Of Ion Implantation On The Reflectivity Of Silica
Author(s): Russell R. Jensen; Ram Kossowsky
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Paper Abstract

The feasibility of creating anti-reflective silica by ion implanting buried, high refractive index layers below the surface of the glass has been investigated. The implantation of Al and Ti appears to increase significantly the index of the buried layers, although not enough to allow anti-reflective glass to be fabricated; excessive absorption in the layers was also encountered. Additional processing steps are suggested which may overcome these problems.

Paper Details

Date Published: 15 September 1982
PDF: 9 pages
Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933794
Show Author Affiliations
Russell R. Jensen, Westinghouse Research and Development Center (United States)
Ram Kossowsky, Westinghouse Research and Development Center (United States)


Published in SPIE Proceedings Vol. 0346:
Thin Film Technologies and Special Applications
William R. Hunter, Editor(s)

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