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Proceedings Paper

Thin Film Growth By Molecular Beam Epitaxy
Author(s): Gary W. Wicks
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Paper Abstract

This paper describes the generalities of molecular beam epitaxy (MBE); it is intended for those interested rather than involved in MBE. MBE has been applied to the growth of thin films of a variety of materials: III-V semiconductors, II-VI's, IV-VI's, silicon and germanium, metals and insulators. The early workl on MBE, and the majority of the effort since then,2,3 has been on the growth of GaAs and other III V's, thus this paper will concentrate on that area.

Paper Details

Date Published: 15 September 1982
PDF: 6 pages
Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); doi: 10.1117/12.933786
Show Author Affiliations
Gary W. Wicks, Cornell University (United States)


Published in SPIE Proceedings Vol. 0346:
Thin Film Technologies and Special Applications
William R. Hunter, Editor(s)

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