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Proceedings Paper

Pattern Nonuniformities Of Imaging Charge Injection Device Arrays Due To Distributed Resistance Capacitance Effects
Author(s): C.H. Chen; D. N. Pocock
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Paper Abstract

A potential source of response nonuniformities of imaging CID's is attributed to the transient behavior of the distributed resistance capacitance (DRC) network associated with the row and column electrodes. The DRC network is evidenced and characterized by the measurement of frequency-dependent admittance. Simulated response nonuniformities are compared favorably to experimentally observed patterns of an InSb CID array. The characteristics and their imposed limitations on the array size, pixel density, and readout rate are discussed.

Paper Details

Date Published: 28 December 1982
PDF: 7 pages
Proc. SPIE 0341, Real-Time Signal Processing V, (28 December 1982); doi: 10.1117/12.933716
Show Author Affiliations
C.H. Chen, Northrop Research and Technology Center (United States)
D. N. Pocock, Northrop Research and Technology Center (United States)


Published in SPIE Proceedings Vol. 0341:
Real-Time Signal Processing V
Joel Trimble, Editor(s)

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