Share Email Print

Proceedings Paper

New Very Low Noise Multilayer And Graded-Gap Avalanche Photodiodes For The 0.8 To 1 .8 Am Wavelength Region
Author(s): F. Capasso; W. T. Tsang; G. F. Williams
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Recent experimental and theoretical results on a new class of low noise avalanche photo-diodes are reviewed. A large enhancement of the impact ionization rates ratio (a/(3=10) has been demonstrated in AlGaAs/GaAs superlattices and graded band gap detector structures. In addition two novel photodiodes ("staircase" and "channeling" APDs) where only electrons multiply, have been proposed. The staircase APD is the solid state analog of the photo-multiplier with discrete dynodes. It has a low operating voltage (5-20 volts) and a lower excess noise factor, in the ideal case, than that of an ideal conventional APD The channeling APD is instead the solid state analog of a channeltron photomultiplier and has the unique feature of an ultrahigh a/β, ratio (≈∞) compatible with high gain (>100).

Paper Details

Date Published: 11 December 1982
PDF: 6 pages
Proc. SPIE 0340, Future Trends in Fiber Optic Communications, (11 December 1982); doi: 10.1117/12.933665
Show Author Affiliations
F. Capasso, Bell Laboratories (United States)
W. T. Tsang, Bell Laboratories (United States)
G. F. Williams, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0340:
Future Trends in Fiber Optic Communications
Charles W. Kleekamp, Editor(s)

© SPIE. Terms of Use
Back to Top