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Proceedings Paper

Electron Beam Versus Optical Step-And-Repeat: A 10X Reticle And 1X Die Distortion Study Employing Nikon X-Y Laser Interferometric Metrology
Author(s): Steven K. Dunbrack; Gary Burns
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Paper Abstract

It is becoming apparent that optical lithography will remain the dominant imaging technique in the production of semiconductor devices for some time to come. Production devices with a minimum feature size of 1.5 microns have been manufactured using lx, 5X and 10X wafer steppers. Lenses are presently being designed with higher numerical apertures and promise a resolution of one micron or less. Full field exposure instruments employing mid to deep ultraviolet illumination also promise a resolution down to one micron or less. It has taken the better part of a decade to perfect technologies in the 3-5 micron region, and it will probably take the better part of the present decade to perfect technologies in the 1-2 micron region. If optical lithography can serve our requirements for a 1-2 micron technology, photomasks will remain an important part of the overall photolithographic process. In order to achieve a 1-2 micron technology, some considerable demands will be made of the photomask manufacturer, especially in the area of overlay accuracy.

Paper Details

Date Published: 13 September 1982
PDF: 11 pages
Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933580
Show Author Affiliations
Steven K. Dunbrack, Ultratech (United States)
Gary Burns, Ultratech (United States)

Published in SPIE Proceedings Vol. 0334:
Optical Microlithography I: Technology for the Mid-1980s
Harry L. Stover, Editor(s)

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