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Proceedings Paper

Characterization Of The Induction Effect At Mid-Ultraviolet Exposure: Application To AZ2400 At 313 Nm
Author(s): Donald C. Hofer; C. Grant Willson; Andrew R. Neureuther; Mark Hakey
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Paper Abstract

This paper describes the use of computer profile simulation and scanning electron microscopic analyses in a study of the combined performance of the mid UV Perkin Elmer exposure tool and AZ2400 resist. New generations of UV resists, including AZ2400, demonstrate a development phenomenon termed the "induction effect" which tends to impart improved performance. The induction effect has been characterized by a new development model that imparts a depth dependence to the rate function. Computer simulated resist profiles generated by SAMPLE, modified to include the induction phenomenon, have been compared with SEM studies of experimental data. The extent of agreement between simulation and experiment over the variables of dose, developer strength, aperture and linewidth is good and is shown to provide a predictive capability which allows rapid and convenient establishment of the effect of process variables on performance.

Paper Details

Date Published: 13 September 1982
PDF: 12 pages
Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933577
Show Author Affiliations
Donald C. Hofer, IBM Research Laboratory (United States)
C. Grant Willson, IBM Research Laboratory (United States)
Andrew R. Neureuther, University of California (United States)
Mark Hakey, IBM General Technology Division (United States)

Published in SPIE Proceedings Vol. 0334:
Optical Microlithography I: Technology for the Mid-1980s
Harry L. Stover, Editor(s)

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