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Proceedings Paper

New High Speed Positive Resist For Wafer Steppers
Author(s): R. F. Leonard; W. F. Cordes
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Paper Abstract

At the Semiconductor Microlithography VI Conference, March 30-31, 1981 a new high speed positive resist, WX118 was described with particular reference to its "properties" (i.e.; 1.) absorption spectrum, 2.) film thickness vs. spin speed, and 3.) optimum softbake and hardbake conditions), and was compared to Hunt's HPR-204 in "conventional" UV exposure, using both contact and 1:1 projection systems. Recent studies with WX-118 resist imaged with a GCA 4800 DSW Wafer Stepper have shown, with different developer systems (i.e., LSI Developer, MIF Developer, WX-ll6 Developer, etc.) structures as small as 0.4 microns wide with near vertical sidewalls. SEMs are presented to demonstrate the superior resolution capabilities of WX-118 resist Plus high photospeed in step and repeat systems. Data are also presented on the modification of WX-118 image profiles from vertical sidewalls to undercut sidewalls. Preliminary information is supplied on the increase in WX-118 softening point by the employment of a post-development UV exposure.

Paper Details

Date Published: 13 September 1982
PDF: 8 pages
Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933576
Show Author Affiliations
R. F. Leonard, Philip A. Hunt Chemical Corporation (United States)
W. F. Cordes, Philip A. Hunt Chemical Corporation (United States)


Published in SPIE Proceedings Vol. 0334:
Optical Microlithography I: Technology for the Mid-1980s
Harry L. Stover, Editor(s)

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