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Proceedings Paper

Resist Characterization: Procedures, Parameters, And Profiles
Author(s): M. Exterkamp; W. Wong; H. Damar; A. R. Neureuther; C. H. Ting; W. G. Oldham
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Paper Abstract

Measurement systems for determining the exposure and development model are coupled with SAMPLE resist profile simulations to explore the impact of positive photoresist types, processing conditions, developer types, and resist lots on line edge profiles. The exposure system uses the optical transmission of a resist layer on a nonreflecting glass substrate as a function of exposure. A full spectrum, high intensity "hard" bleach is used to completely expose the photoactive compound. The companion development system uses optical interference through a transparent substrate to measure the development rate. The reproducibility of these systems and their accuracy compared to independent measurements are considered. These systems are applied to the problems of determining the critical prebake temperature at which thermal degradation occurs, exploring differences between developers, and making lot-to-lot comparisons of resists. Parameter values for several resists are reported. The importance of the exposure and development parameters is illustrated using the SAMPLE program.

Paper Details

Date Published: 13 September 1982
PDF: 6 pages
Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933575
Show Author Affiliations
M. Exterkamp, University of California (United States)
W. Wong, University of California (United States)
H. Damar, University of California (United States)
A. R. Neureuther, University of California (United States)
C. H. Ting, University of California (United States)
W. G. Oldham, University of California (United States)

Published in SPIE Proceedings Vol. 0334:
Optical Microlithography I: Technology for the Mid-1980s
Harry L. Stover, Editor(s)

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