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Proceedings Paper

Faithful Pattern Transfer: What Are The Limits In Production?
Author(s): Richard L. Bersin; Barry Gelernt
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Paper Abstract

As the Semiconductor industry moves toward 1 micron and submicron lithography, it is critical that anisotropic dry-etching reproduce the pattern linewidth control of the lithographic tools generating the patterns. The strength of custom processing individual wafers as opposed to batch treatments lies in creating an identical chemical and physical environment for each wafer (absence of loading effects) and in individual process monitoring and control to compensate for variations among the wafers themselves: the result is exceptional process-consistency and pattern-transfer control. This paper will discuss the correlation between real-time optical process signature monitoring and post-etch patttern-transfer analysis. Elimination of contamination via load-locked reactor design and contaminant monitoring will be discussed, as well as new methods for precision control and maintaining consistent accuracy of process parameters such as pressure, gas-flow rates, residence time and RF power.

Paper Details

Date Published: 13 September 1982
PDF: 12 pages
Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); doi: 10.1117/12.933573
Show Author Affiliations
Richard L. Bersin, The Perkin-Elmer Corporation (United States)
Barry Gelernt, The Perkin-Elmer Corporation (United States)


Published in SPIE Proceedings Vol. 0334:
Optical Microlithography I: Technology for the Mid-1980s
Harry L. Stover, Editor(s)

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