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Proceedings Paper

Ion-Channelling Effects In Scanning Microscopy And Ion Beam Writing With A 60 keV Ga+ Probe
Author(s): R. Levi-Setti; T. R. Fox; K. Lam
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Paper Abstract

We describe the operation and functions of a scanning ion microscope. This has been shown capable of detecting ion-channelling phenomena in crystalline materials through the observation of crystallographic contrast in images obtained with the secondary electron and secondary ion signal. The instrument also provides on-line quantitative information on surface amorphization and on channelling effects in direct ion beam writing.

Paper Details

Date Published: 30 June 1982
PDF: 5 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933428
Show Author Affiliations
R. Levi-Setti, The University of Chicago (United States)
T. R. Fox, The University of Chicago (United States)
K. Lam, The University of Chicago (United States)


Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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