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Proceedings Paper

Ion Beam Lithography System Using A High Brightness H2+ Ion Source
Author(s): Benjamin M. Siegel; Gary R. Hanson; Miklos Szilagyi; David R. Thomas; Richard J. Blackwell; Hongyul Paik
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Paper Abstract

The characteristics of the ion source determine the writing soeed and resolution that can be realized in direct writing ion beam lithography with focussed ion orobes. We have developed an H2+ ion source with very high brightness and low energy snread.1 Two ion beam lithography systems based on this source are being develoned. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density Probes. The desicn narameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities 100 amn/cm2. The systems will be use 1. to investigate and a' my ion beam lithogranhy: ion-resist interactions, resist eNnosure and develonment characteristics, resolution limits, ion beam structuring of devices, etc.

Paper Details

Date Published: 30 June 1982
PDF: 6 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933427
Show Author Affiliations
Benjamin M. Siegel, Cornell University (United States)
Gary R. Hanson, Cornell University (United States)
Miklos Szilagyi, Cornell University (United States)
David R. Thomas, Cornell University (United States)
Richard J. Blackwell, Cornell University (United States)
Hongyul Paik, Cornell University (United States)


Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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