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Proceedings Paper

Resist Possibilities And Limitations In Ion Beam Lithography
Author(s): A. Macrander; D. Barr; A. Wagner
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Paper Abstract

A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 KeV H2+, 100 KeV and and 150 KeV Li+ ions are presented and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.

Paper Details

Date Published: 30 June 1982
PDF: 10 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933426
Show Author Affiliations
A. Macrander, Bell Laboratories (United States)
D. Barr, Bell Laboratories (United States)
A. Wagner, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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