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Proceedings Paper

X-Ray Lithography: Fabrication Of Masks And Very Large Scale Integrated (VLSI) Devices
Author(s): B. B. Triplett; S. Jones
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Paper Abstract

Recent advances in x-ray lithography show that accurate, low defect replication of submicron features is becoming a reality. However, before x-ray lithography can be implemented in production several difficult issues must be resolved. In particular, x-ray masks must be fabricated on thin membranes with low defect density and high dimensional stability. The Intel Magnetics one megabit bubble memory is an ideal initial evaluation device because of the high resolution required (1.2 μm minimum feature size) together with its defect and alignment tolerance. Data is presented on one megabit bubble memories fabricated with the trilevel resist scheme using the commercially available resist Sel-N, Type A (exposure time is typically 2 minutes with the Perkin-Elmer 10kW tungsten x-ray exposure system). Distortion and defect data is presented showing our learning experience in fabricating x-ray masks with MEBES. Masks with sufficient stability to start LSI silicon device evaluation have been available for more than a year, masks with sufficiently low defect density to start evaluation of such devices are projected to be available in 1982. Radiation sensitive LSI devices have been exposed to lithographic levels of x-ray flux while undergoing otherwise conventional fabrication. Test data showing no performance degradation in these devices is reviewed.

Paper Details

Date Published: 30 June 1982
PDF: 6 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933422
Show Author Affiliations
B. B. Triplett, Intel Magnetics, Incorporated (United States)
S. Jones, Intel Magnetics, Incorporated (United States)

Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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