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Proceedings Paper

Low Energy Electron Beam Lithography
Author(s): K. J. Polasko; Y. W. Yau; R. F. W. Pease
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Paper Abstract

The two most serious problems in electron beam lithography are proximity effects and slow throughput. The former arises from the penetration of the electrons which, at conventional electron energies, can greatly exceed the size of the exposure element. Thus much of the exposing electron's energy is wasted. The use of electrons whose energy is much lower results in a much more compact area of exposure and should result in improved linewidth control and in more efficient use of the exposing power.

Paper Details

Date Published: 30 June 1982
PDF: 7 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933415
Show Author Affiliations
K. J. Polasko, Stanford University (United States)
Y. W. Yau, Stanford University (United States)
R. F. W. Pease, Stanford University (United States)


Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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