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Proceedings Paper

New Microlithographic Resists
Author(s): Kang I. Lee; Harriet Jopson; Peter Cukor; David Shaver
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Paper Abstract

We have found that a family of ionic polymers, various oolyvinylnyridinium salts, can act as good electron beam resists. Exoosure of these polymers to a 20 XV electron beam resulted in sensitivities ranging up to 5 μcoulomb/cm2. A number of materials definately exhibited submicron caoabilities. Furthermore, the highly aromatic nature of the nolymer provided the outstanding plasma etch resistance. In order to elucidate the chemical structural variables which influence the resist Performance, a series of polymers has been synthesized by varying molecular weights, molecular weight distributions, counterions, alkyl groups, degrees of Quaternization, etc. We subsequently studied the resist behavior of these materials. Several postulated mechanisms will be discussed to explain the resist action.

Paper Details

Date Published: 30 June 1982
PDF: 4 pages
Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933406
Show Author Affiliations
Kang I. Lee, GTE Laboratories, Incorporated (United States)
Harriet Jopson, GTE Laboratories, Incorporated (United States)
Peter Cukor, GTE Laboratories, Incorporated (United States)
David Shaver, MIT Lincoln Laboratory (United States)


Published in SPIE Proceedings Vol. 0333:
Submicron Lithography I
Phillip D. Blais, Editor(s)

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