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Proceedings Paper

Fabrication Of Integral Solar Cell Covers By A Plasma-Activated Source
Author(s): Harold S. Gurev
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Paper Abstract

A novel plasma-activated CVD process has been employed to deposit SiO2 and mixed oxide (SiO2+ Al2O3) covers directly on silicon solar cells. SiO2 covers as thick as 130μm were deposited near 20μm per hour at substrate temperatures below 150°C. Deposition stresses and cell fracture become serious problems above 60μm thickness.

Paper Details

Date Published: 29 April 1982
PDF: 12 pages
Proc. SPIE 0325, Optical Thin Films, (29 April 1982); doi: 10.1117/12.933296
Show Author Affiliations
Harold S. Gurev, Optical Coating Laboratory, Inc. (United States)

Published in SPIE Proceedings Vol. 0325:
Optical Thin Films
Richard Ian Seddon, Editor(s)

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