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Proceedings Paper

Experimental demonstration of a magnetic bipolar junction transistor
Author(s): E. Johnston-Halperin; M. E. Flatte; D. D. Awschalom
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Paper Abstract

The field of semiconductor spintronics has pursued the development of novel device architectures exploiting the spin degree of freedom in addition to, or in place of, traditional charge based functionality. In particular, theoretical modeling has predicted that the addition of a magnetic base layer to a bipolar junction transistor has the potential to serve as an exceptionally efficient spin filter, add intrinsically non-volatile functionality and exhibit extremely fast switching. Here, we present the experimental implementation of this scheme via the inclusion of a digitally-doped (Ga,Mn)As layer into the p region of an n-p-n III-As heterojunction bipolar transistor. These proof of principle devices exhibit gain greater than one, concurrent with robust ferromagnetism, which demonstrates a critical step in the development of an active spin functional device architecture.

Paper Details

Date Published: 9 October 2012
PDF: 6 pages
Proc. SPIE 8461, Spintronics V, 846107 (9 October 2012); doi: 10.1117/12.933278
Show Author Affiliations
E. Johnston-Halperin, The Ohio State Univ. (United States)
M. E. Flatte, The Univ. of Iowa (United States)
D. D. Awschalom, Univ. of California, Santa Barbara (United States)

Published in SPIE Proceedings Vol. 8461:
Spintronics V
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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