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Proceedings Paper

Tunneling In The Reverse Dark Current Characteristic Of Be-Implanted GaAlAsSb Avalanche Photodetectors
Author(s): R. Chin; C. A. Hill; N. Tabatabaie; G. E. Stillman
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Paper Abstract

Tunneling current has been identified in the reverse I-V characteristics of Be-implanted Ga0.8A10.2AsySb1-y avalanche photodiodes. The tunneling energy is considerably less than the bandgap energy. This identifies the tunneling mechanism as defect assisted tunneling rather than a band-to-band process. It is also shown with the proper structure that the defect assisted tunneling can virtually be eliminated, resulting in extremely low dark current GaAlAsSb photodiodes.

Paper Details

Date Published: 27 August 1982
PDF: 7 pages
Proc. SPIE 0321, Integrated Optics II, (27 August 1982); doi: 10.1117/12.933234
Show Author Affiliations
R. Chin, Rockwell International/MRDC (United States)
C. A. Hill, Rockwell International/MRDC (United States)
N. Tabatabaie, University of Illinois/Urbana-Champaign (United States)
G. E. Stillman, University of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0321:
Integrated Optics II
Dennis G. Hall, Editor(s)

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