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Proceedings Paper

Picosecond And Subpicosecond Luminescence In Semiconductors
Author(s): D. L. Rosen; A. Katz; A. G. Doukas; Y. Budansky; R. R. Alfano
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Paper Abstract

Transient recombination kinetics of photogenerated elementary excitations in semiconductors can be studied with subpicosecond time resolution. This note describes the different time resolved luminescence techniques which are applicable to semiconductors, such as the optical Kerr gate, the up-conversion gate, the streak camera, the three-pulse excitation method and the population mixing method.

Paper Details

Date Published: 23 April 1982
PDF: 6 pages
Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); doi: 10.1117/12.933233
Show Author Affiliations
D. L. Rosen, The City College of New York (United States)
A. Katz, The City College of New York (United States)
A. G. Doukas, The City College of New York (United States)
Y. Budansky, The City College of New York (United States)
R. R. Alfano, The City College of New York (United States)


Published in SPIE Proceedings Vol. 0322:
Picosecond Lasers and Applications
Lawrence S. Goldberg, Editor(s)

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