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Proceedings Paper

Picosecond Photoconductive Devices
Author(s): A. P. DeFonzo; T. F. Carruthers
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Paper Abstract

Two devices based on picosecond photoconductivity are reported. One is a germanium on sapphire device with a response time (FWHM) faster than 50 ps and a sensitivity in excess of 0.1 ma/mW, and is suitable for use when ultra-high speed gating of electrical signal is required. The other is an optically triggered GaAs transferred-electron device that generates oscillation bursts of controllable duration and frequency over the ranges of 1.5 to 4.0 nsec and 6.7 to 10.5 GHz, respectively.

Paper Details

Date Published: 23 April 1982
PDF: 6 pages
Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); doi: 10.1117/12.933225
Show Author Affiliations
A. P. DeFonzo, Naval Research Laboratory (United States)
T. F. Carruthers, Naval Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0322:
Picosecond Lasers and Applications
Lawrence S. Goldberg, Editor(s)

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