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Proceedings Paper

Refractory Metal Interconnects For VHSIC
Author(s): Lynette B. Roth; Gunter Hagen
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Paper Abstract

The increasing stringency of the speed, power, and density requirements of signal processors for military systems over the past decade has contributed to a rapid reduction of the typical feature size of IC components and to the development of high-performance technologies such as CMOS/SOS and I2L. The continued evolution of semiconductor technologies to even smaller feature sizes and improved performance characteristics indicates the need to reorganize the chip architecture into cells and to provide a two-level interconnect scheme.(1-7) Specifically the first level of interconnect would be used for low-energy communication within a cell and the second level would route power around the chip and provide communication between cells. Further advantages can be gained if the first level metal is a low resistivity refractory material.(1-7)

Paper Details

Date Published: 4 August 1982
PDF: 7 pages
Proc. SPIE 0319, Very High Speed Integrated Circuit Technology for Electro-Optic Applications, (4 August 1982); doi: 10.1117/12.933159
Show Author Affiliations
Lynette B. Roth, Hughes Research Laboratories (United States)
Gunter Hagen, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0319:
Very High Speed Integrated Circuit Technology for Electro-Optic Applications
William S. Chan; John T. Hall, Editor(s)

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