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Proceedings Paper

Real Space Transfer Electron Device Oscillator--A New Candidate For The Near Millimeter Range
Author(s): Paul D. Coleman
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Paper Abstract

This paper reports on the demonstration of a new solid state oscillator principle based upon the real space transfer (RST) of electrons from a high mobility GaAs layer to a low mobility A1GaAs layer in a GaAs/AlGaAs heterostructure. The RST of electrons is achieved by applying a DC bias plus the AC field parallel to the layered interface of the heterostructure to periodically heat and cool the electrons. When the electric field increases, the current decreases and a negative differential resistance effect is realized. The transit time in the oscillator is associated with electron motion across the thin (100-1000 YR) heterostructure layers and not with the electron motion between voltage contacts. A theory of the oscillator predicts it should be capable of generating frequencies well beyond 100 GHz. The power output of the oscillator depends on the number of pairs of GaAs/A1GaAs layers. Since the number of pairs can be made quite large without increasing capacity effects, the total power promises to be substantial.

Paper Details

Date Published: 2 August 1982
PDF: 6 pages
Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933129
Show Author Affiliations
Paul D. Coleman, University of Illinois (United States)

Published in SPIE Proceedings Vol. 0317:
Integrated Optics and Millimeter and Microwave Integrated Circuits
Bob D. Guenther; William Pittman, Editor(s)

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