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Proceedings Paper

Application Of Molecular Beam Epitaxy To Microwave And Millimeter Wave Devices
Author(s): N.Walter Cox
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Paper Abstract

Material requirements for various microwave and millimeter wavelength solid state devices are discussed and the applicability of molecular beam exitaxy to growth of the epitaxial layers is presented. The complex doping profiles required for these devices suggest the precise control of epitaxial film thickness, impurity concentration, uniformity, interfaces, alloy composition and surface quality achievable with MBE.

Paper Details

Date Published: 2 August 1982
PDF: 8 pages
Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933128
Show Author Affiliations
N.Walter Cox, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0317:
Integrated Optics and Millimeter and Microwave Integrated Circuits
Bob D. Guenther; William Pittman, Editor(s)

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