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Proceedings Paper

Silicon Technology Applicable To Monolithic Millimeter Wave Sources
Author(s): A. Rosen; M. Caulton; P. Stabile; A. Gombar; W. Janton; C. P. Wu; C. W. Magee
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Paper Abstract

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, unique secondary ion mass spectroscopy (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra-thin, reproducible wafers, and have resulted in the development of silicon hybrid circuits, thus paving the way to production of silicon monolithic integrated millimeter-wave sources.

Paper Details

Date Published: 2 August 1982
PDF: 8 pages
Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933108
Show Author Affiliations
A. Rosen, RCA Laboratories (United States)
M. Caulton, RCA Laboratories (United States)
P. Stabile, RCA Laboratories (United States)
A. Gombar, RCA Laboratories (United States)
W. Janton, RCA Laboratories (United States)
C. P. Wu, RCA Laboratories (United States)
C. W. Magee, RCA Laboratories (United States)

Published in SPIE Proceedings Vol. 0317:
Integrated Optics and Millimeter and Microwave Integrated Circuits
Bob D. Guenther; William Pittman, Editor(s)

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