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Proceedings Paper

Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures
Author(s): J. J. Wiczer; L. R. Dawson; G. C. Osbourn; C. E. Barnes
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Paper Abstract

This paper reports on photodiode structures designed and fabricated to reduce unwanted ionizing-radiation induced noise currents without significantly reducing the optical sig-nal currents. For the optical wavelength range from 0.7 µm to 1.4 μm, we have studied three types of photodiode structures fabricated from GaAlAs/GaAs, GaAlSb, and InGaAsP compound semiconductor materials. In addition, we compare the results of testing these specially designed direct bandgap photodiodes with commercially available direct and indirect hand qap photodiodes in an ionizing-radiation environment.

Paper Details

Date Published: 22 January 1982
PDF: 8 pages
Proc. SPIE 0296, Fiber Optics in Adverse Environments I, (22 January 1982); doi: 10.1117/12.932434
Show Author Affiliations
J. J. Wiczer, Sandia National Laboratories (United States)
L. R. Dawson, Sandia National Laboratories (United States)
G. C. Osbourn, Sandia National Laboratories (United States)
C. E. Barnes, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0296:
Fiber Optics in Adverse Environments I
Peter B. Lyons, Editor(s)

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