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Proceedings Paper

Detailed Fourier Transform Infrared (FTIR) Study Of The Temperature Dependence Of The Oxygen Impurity In Silicon
Author(s): K. Krishnan; S. L. Hill
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Paper Abstract

Fl-IR spectra of Czochralski silicon crystals containing interstitial oxygen impurity have been recorded from 15K to room temperature. The major bands due to the oxygen impurity show intensity and frequency changes. These changes can be discussed in terms of a model for the oxygen atom moving in a potential with six-fold axis as described by Hrostowski and Adler.

Paper Details

Date Published: 29 October 1981
PDF: 3 pages
Proc. SPIE 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy, (29 October 1981); doi: 10.1117/12.932114
Show Author Affiliations
K. Krishnan, Digilab Division of Bio-Rad Laboratories (United States)
S. L. Hill, Digilab Division of Bio-Rad Laboratories (United States)


Published in SPIE Proceedings Vol. 0289:
1981 Intl Conf on Fourier Transform Infrared Spectroscopy
Hajime Sakai, Editor(s)

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