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Proceedings Paper

Scanning Microellipsometer For The Spatial Characterization Of Thin Films
Author(s): D. J. Dunlavy; R. B . Hammond; R. K. Ahrenkiel
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Paper Abstract

A polarization-modulated ellipsometer was constructed to investigate the optical properties of surfaces and transparent thin films. In the latter case, the measurement gives a unique determination of the index of refraction n and film thickness t. Using a HeNe laser light source, the beam was focused to a spot size of 50 μm. By stepping the sample across the focal point of the laser beam in both x and y directions, the spatial uniformity could be measured. This apparatus was particularly useful for optical profiling laser-annealed oxide films grown on GaAs. A new technique for laser annealing native oxides on GaAs produced the need for observing spatial structure with spatial resolution of less than 100 μm. Here the laser pulse produced a "crater" in the oxide due to localized healing and subsequent densification of the film (Figs. 1 & 2). This technique allows profiling of film index of refraction and thickness across the laser irradiated area--about 2 to 3 mm in our case. A number of applications in microelectronics are suggested.

Paper Details

Date Published: 30 December 1981
PDF: 5 pages
Proc. SPIE 0288, Los Alamos Conf on Optics '81, (30 December 1981); doi: 10.1117/12.932075
Show Author Affiliations
D. J. Dunlavy, Los Alamos National Laboratory (United States)
R. B . Hammond, Los Alamos National Laboratory (United States)
R. K. Ahrenkiel, Los Alamos National Laboratory (United States)

Published in SPIE Proceedings Vol. 0288:
Los Alamos Conf on Optics '81
Donald H. Liebenberg, Editor(s)

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